標題: ABRUPTNESS OF GE COMPOSITION AT THE SI/SIGE INTERFACE GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
作者: TSAI, WC
CHANG, CY
JUNG, TG
LIOU, TS
HUANG, GW
CHANG, TC
CHEN, LP
LIN, HC
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 21-Aug-1995
摘要: A model is proposed to estimate the interfacial abruptness of the Si/SiGe heterojunction. In this model, a transition region with linearly graded Ge composition is assumed at the Si/SiGe interface. The Ge composition x of Si/SiGe quantum well grown by ultrahigh vacuum chemical vapor deposition at 550 degrees C is found to increase with the deposition time as deposition at the same gas phase composition. This phenomenon can be explained by this model and the fitting results match the measured data. The thickness of the transition region and the transition time can be extracted from these fittings. The transition thicknesses are found to be about 1.9 nm or thinner as grown at 550 degrees C or below. (C) 1995 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.114471
http://hdl.handle.net/11536/1773
ISSN: 0003-6951
DOI: 10.1063/1.114471
期刊: APPLIED PHYSICS LETTERS
Volume: 67
Issue: 8
起始頁: 1092
結束頁: 1094
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