標題: | Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy |
作者: | Wang, SD Chang, MN Chen, CY Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2005 |
摘要: | Scanning capacitance microscopy (SCM) was employed to observe the oxide breakdown sites. The localized breakdown spots obviously exhibit low differential capacitance signals. The observed area of the breakdown spots approximately ranges from 6 nm to 13 nm in lateral direction. According to contact-mode atomic force microscopy (AFM) image, the surface morphology has little effect on the SCM signal. |
URI: | http://hdl.handle.net/11536/17751 http://dx.doi.org/10.1109/RELPHY.2005.1493173 |
ISBN: | 0-7803-8803-8 |
DOI: | 10.1109/RELPHY.2005.1493173 |
期刊: | 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL |
起始頁: | 622 |
結束頁: | 623 |
顯示於類別: | 會議論文 |