標題: Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy
作者: Wang, SD
Chang, MN
Chen, CY
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: Scanning capacitance microscopy (SCM) was employed to observe the oxide breakdown sites. The localized breakdown spots obviously exhibit low differential capacitance signals. The observed area of the breakdown spots approximately ranges from 6 nm to 13 nm in lateral direction. According to contact-mode atomic force microscopy (AFM) image, the surface morphology has little effect on the SCM signal.
URI: http://hdl.handle.net/11536/17751
http://dx.doi.org/10.1109/RELPHY.2005.1493173
ISBN: 0-7803-8803-8
DOI: 10.1109/RELPHY.2005.1493173
期刊: 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL
起始頁: 622
結束頁: 623
顯示於類別:會議論文


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