Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy

Abstract

Scanning capacitance microscopy (SCM) was employed to observe the oxide breakdown sites. The localized breakdown spots obviously exhibit low differential capacitance signals. The observed area of the breakdown spots approximately ranges from 6 nm to 13 nm in lateral direction. According to contact-mode atomic force microscopy (AFM) image, the surface morphology has little effect on the SCM signal.