标题: Strain-induced very low noise RF MOSFETs on flexible plastic substrate
作者: Kao, HL
Chin, A
Hung, BF
Lai, JM
Lee, CF
Li, MF
Samudra, GS
Zhu, C
Xia, ZL
Liu, XY
Kang, JF
电机学院
College of Electrical and Computer Engineering
公开日期: 2005
摘要: Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 mu m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30 mu m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 mu m and 90nm nodes MOSFETs.
URI: http://hdl.handle.net/11536/17837
ISBN: 4-900784-00-1
期刊: 2005 Symposium on VLSI Technology, Digest of Technical Papers
起始页: 160
结束页: 161
显示于类别:Conferences Paper