标题: | Strain-induced very low noise RF MOSFETs on flexible plastic substrate |
作者: | Kao, HL Chin, A Hung, BF Lai, JM Lee, CF Li, MF Samudra, GS Zhu, C Xia, ZL Liu, XY Kang, JF 电机学院 College of Electrical and Computer Engineering |
公开日期: | 2005 |
摘要: | Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 mu m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30 mu m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 mu m and 90nm nodes MOSFETs. |
URI: | http://hdl.handle.net/11536/17837 |
ISBN: | 4-900784-00-1 |
期刊: | 2005 Symposium on VLSI Technology, Digest of Technical Papers |
起始页: | 160 |
结束页: | 161 |
显示于类别: | Conferences Paper |