Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Che-Yu	en_US
dc.contributor.author	Wu, Yung-Chun	en_US
dc.contributor.author	Chang, Ting-Chang	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.author	Chen, Chi-Shen	en_US
dc.contributor.author	Tu, Chun-Hao	en_US
dc.contributor.author	Chang, Chun-Yen	en_US
dc.date.accessioned	2014-12-08T15:25:30Z	-
dc.date.available	2014-12-08T15:25:30Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	978-957-28522-2-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17905	-
dc.description.abstract	We have investigated the temperature dependent electrical characteristics of lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths from 25 degrees C to 175 degrees C. The ten 67 nm-wide spilt channels TFT has best transfer characteristics, because of its robust trigate control and grain boundary defects is the lowest, due to its split nan-wires structure with effective NH3 plasma passivation.	en_US
dc.language.iso	en_US	en_US
dc.title	Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005	en_US
dc.citation.spage	500	en_US
dc.citation.epage	502	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000259399200137	-
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