標題: Modeling of the parasitic resistance effect in poly-Si TFTs with LDD structure
作者: Kao, Shih-Chin
Zan, Hsiao Wen
Chen, Shih-Ching
光電工程學系
Department of Photonics
公開日期: 2005
摘要: In this study, the model of poly-Si TFTs with LDD structure had been proposed. Firstly, parasitic resistance parameters were extracted from devices with various channel length and LDD length. Then, an accurate I-V model was constructed by combining basic TFT model (RPI model) and the parasitic resistance effects. The model had been verified for devices with channel length larger than 6 mu m. The transconductance behavior in both linear region and saturation region are also well explained by our proposed model.
URI: http://hdl.handle.net/11536/17908
ISBN: 978-957-28522-2-4
期刊: IDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005
起始頁: 529
結束頁: 532
Appears in Collections:Conferences Paper