完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yu, Jue-Chin | en_US |
dc.contributor.author | Yu, Peichen | en_US |
dc.date.accessioned | 2014-12-08T15:03:14Z | - |
dc.date.available | 2014-12-08T15:03:14Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.isbn | 978-0-81948-532-8 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1796 | - |
dc.identifier.uri | http://dx.doi.org/10.1117/12.879440 | en_US |
dc.description.abstract | Inverse lithography which generates model-based patterns theoretically has superior patterning fidelity comparing to conventional rule-based technique. Cost functions are the determinant of performance inverse lithography that is also an optimization problem. However, the design and know-how of cost functions have rarely been discussed. In this paper, we investigate the impacts of various cost functions and their superposition for inverse lithography patterning exploiting a steepest descent algorithm. We research the most generally used objective functions, which are the resist and aerial images, and also deliver a derivation for the aerial image contrast. We then discuss the pattern fidelity and final mask characteristics for simple layouts with a single isolated contact and two nested contacts. Moreover, the convergences which are expressed by edge-placement error (EPE) and contrast versus iteration numbers rapidly attain to steady sate in most hybrid cost functions. All in all, we conclude that a cost function composed of a dominant resist-image component and a minor aerial-image or image-contrast component can carry out a good mask correction and contour targets when using inverse lithography patterning. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Microlithography | en_US |
dc.subject | Inverse lithography | en_US |
dc.subject | Model-based pattering | en_US |
dc.subject | Gradient descent | en_US |
dc.subject | Computational imaging | en_US |
dc.title | Choosing objective functions for inverse lithography patterning | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1117/12.879440 | en_US |
dc.identifier.journal | OPTICAL MICROLITHOGRAPHY XXIV | en_US |
dc.citation.volume | 7973 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000294216100052 | - |
顯示於類別: | 會議論文 |