標題: | 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS |
作者: | Yu, DS Chin, A Laio, CC Lee, CF Cheng, CF Chen, WJ Zhu, C Li, MF Yoo, WJ McAlister, SP Kwong, DL 交大名義發表 National Chiao Tung University |
公開日期: | 2004 |
摘要: | For the first time, we demonstrate 3D integration of self-aligned IrO2(Hf)/LaAlO3/GOI CMOSFETs above 0.18 pm Si CMOSFETs. At EOT=1.4nm, the novel IrO2(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO3/Si devices have high electron and hole mobilities of 203 and 67 cm(2)/Vs. On the 3D structure the LaAlO3/GOI shows even higher 389 and 234 cm(2)/Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation. |
URI: | http://hdl.handle.net/11536/18124 http://dx.doi.org/10.1109/IEDM.2004.1419101 |
ISBN: | 0-7803-8684-1 |
DOI: | 10.1109/IEDM.2004.1419101 |
期刊: | IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST |
起始頁: | 181 |
結束頁: | 184 |
Appears in Collections: | Conferences Paper |
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