A method to enhance the data transfer rate of phase change recording media

Abstract

Nitrogen doping was applied to enhance the velocity of amorphous-crystalline phase transformation. The nitrogen doping was able to produce tiny nitride precipitates uniformly distributed in the recording layer and provided numerous preferential sites for amorphous-crystalline transition. At the doping condition of N-2/Ar ratio = 3%, the recrystallization velocity of GeInSbTe phase change recording media was increased up to 1.6 times without severely damaging the signal jitter values.