標題: | Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process |
作者: | Ker, MD Wu, WL Chang, CY 電機學院 College of Electrical and Computer Engineering |
公開日期: | 2004 |
摘要: | Different electrostatic discharge (ESD) devices in a 0.35-mum silicon germanium (SiGe) RF BiCMOS process are characterized in detail by transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and the silicon-germanium heterojunction bipolar transistors (HBTs) with different layout parameters have been drawn for investigating their ESD robustness. The human-body-model (HBM) ESD robustness of SiGe HBTs with the optional low-voltage (LV), ligh-voltage (HV), and high-speed (HS) implantations has been measured and compared in the experimental test chips. |
URI: | http://hdl.handle.net/11536/18262 |
ISBN: | 0-7803-8262-5 |
期刊: | ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES |
起始頁: | 7 |
結束頁: | 12 |
顯示於類別: | 會議論文 |