標題: Characterization on ESD devices with test structures in silicon germanium RF BiCMOS process
作者: Ker, MD
Wu, WL
Chang, CY
電機學院
College of Electrical and Computer Engineering
公開日期: 2004
摘要: Different electrostatic discharge (ESD) devices in a 0.35-mum silicon germanium (SiGe) RF BiCMOS process are characterized in detail by transmission line pulse (TLP) generator and ESD simulator for on-chip ESD protection design. The test structures of diodes with different p-n junctions and the silicon-germanium heterojunction bipolar transistors (HBTs) with different layout parameters have been drawn for investigating their ESD robustness. The human-body-model (HBM) ESD robustness of SiGe HBTs with the optional low-voltage (LV), ligh-voltage (HV), and high-speed (HS) implantations has been measured and compared in the experimental test chips.
URI: http://hdl.handle.net/11536/18262
ISBN: 0-7803-8262-5
期刊: ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
起始頁: 7
結束頁: 12
Appears in Collections:Conferences Paper