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dc.contributor.authorTsui, BYen_US
dc.contributor.authorWu, MDen_US
dc.contributor.authorGan, TCen_US
dc.contributor.authorChou, HHen_US
dc.contributor.authorWu, ZLen_US
dc.contributor.authorSune, CTen_US
dc.date.accessioned2014-12-08T15:25:51Z-
dc.date.available2014-12-08T15:25:51Z-
dc.date.issued2004en_US
dc.identifier.isbn4-88686-060-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18282-
dc.description.abstractLow specific on-resistance (R-ds,R-on) and low gate capacitance are essential for trench gate power MOSFETs. In this work, we propose a simple method of retrograde body profile to improve the two parameters simultaneously. The retrograde body MOSFET (RBMOS) is realized by high energy implantation. Because the highest channel concentration locates close to drain side, the depletion width at drain side is suppressed so that the channel length can be shortened greatly without sacrificing punch-through voltage. Low thermal budget and easy trench gate process are additional benefits. Power MOSFET with channel length of 0.4 mum, threshold voltage of 1V, and breakdown voltage of 32V is demonstrated. Comparing with the conventional device, the specific on-resistance and the figure-of-merit can be improved by 38% and 70%, respectively.en_US
dc.language.isoen_USen_US
dc.titleTrench gate power MOSFETs with retrograde body profileen_US
dc.typeProceedings Paperen_US
dc.identifier.journalISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICSen_US
dc.citation.spage213en_US
dc.citation.epage216en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000223808200046-
Appears in Collections:Conferences Paper