標題: Design to avoid the over-gate-driven effect on ESD protection circuits in deep-submicron CMOS processes
作者: Ker, MD
Chen, WY
電機學院
College of Electrical and Computer Engineering
公開日期: 2004
摘要: Although the gate-driven (or gate-coupled) technique was reported to improve ESD robustness of NMOS devices, the over-gate-driven effect has been found to degrade ESD level. This effect makes the gate-driven technique hard to be well optimized in deep-submicron CMOS ICs. In this work, a new design is proposed to overcome such over-gate-driven effect by circuit design and to achieve the maximum ESD capability of devices. The experimental results have shown significant improvement on the machine-model (MM) ESD robustness of ESD protection circuit by this new proposed design. This new design is portable (process-migration) for applications in different CMOS processes without modifying the process step or mask layer.
URI: http://hdl.handle.net/11536/18285
ISBN: 0-7695-2093-6
期刊: ISQED 2004: 5TH INTERNATIONAL SYMPOSIUM ON QUALITY ELECTRONIC DESIGN, PROCEEDINGS
起始頁: 445
結束頁: 450
Appears in Collections:Conferences Paper