標題: A study of the threshold voltage variations for ultrathin body double gate SOI MOSFETs
作者: Tang, CS
Lo, SC
Lee, JW
Tsai, JH
Li, YM
電子物理學系
Department of Electrophysics
關鍵字: double-gate devices;ultrathin body;quantum mechanical effects;threshold voltage;modeling and simulation
公開日期: 2004
摘要: Silicon on insulator (SOI) devices have been of great interest in these years. In this paper, simulation with density-gradient transport model is performed to examine the variation of threshold voltage (VTH) for double gate SOI MOSFETs. Different thickness of silicon (Si) film, oxide thickness, channel length and doping concentration are considered in this work. According to the numerical study, both drift-difftision (DD) and density gradient (DG) models demonstrate that the thickness of Si film greatly affects the threshold voltage (5 similar to 15% variation). It is found that the thickness of Si film decreases, VTH variation increases; and the dependence relation is nonlinear. Therefore, this effect must be taken into account for the realization of double gate SOI ULSI circuit.
URI: http://hdl.handle.net/11536/18292
ISBN: 0-9728422-9-2
期刊: NSTI NANOTECH 2004, VOL 3, TECHNICAL PROCEEDINGS
起始頁: 145
結束頁: 148
Appears in Collections:Conferences Paper