標題: Fast and precise subthreshold slope method for extracting gate capacitive coupling coefficient in flash memory cells
作者: Cho, CYS
Chen, MJ
Chen, CF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: A fast and precise subthreshold slope method for extraction of gate capacitive coupling coefficient is substantially confirmed by experimental data from three types of flash memory cells: stacked gate, sidewall source-side injection (SSI), and split-gate cells. This new method furnishes promising potentials: (i) it can eliminate the effect of process variations; (ii) the traditional source or drain capacitive coupling measurement becomes unnecessary; (iii) only a few dc measurements are needed; and (iv) even dummy transistors can be removed out. Therefore, the method is highly suitable as an in-line process monitor.
URI: http://hdl.handle.net/11536/18442
ISBN: 0-7803-7653-6
期刊: ICMTS 2003: PROCEEDINGS OF THE 2003 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES
起始頁: 186
結束頁: 190
Appears in Collections:Conferences Paper