标题: | Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process |
作者: | Chan, KT Chin, A McAlister, SP Chang, CY Tseng, C Liang, V Chen, JK Chien, SC Duh, DS Lin, WJ 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 2003 |
摘要: | Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology. |
URI: | http://hdl.handle.net/11536/18544 http://dx.doi.org/10.1109/MWSYM.2003.1212529 |
ISBN: | 0-7803-7695-1 |
ISSN: | 0149-645X |
DOI: | 10.1109/MWSYM.2003.1212529 |
期刊: | 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 |
起始页: | 963 |
结束页: | 966 |
显示于类别: | Conferences Paper |
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