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dc.contributor.authorHuang, CHen_US
dc.contributor.authorChan, KTen_US
dc.contributor.authorChen, CYen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorTseng, Cen_US
dc.contributor.authorLiang, Ven_US
dc.contributor.authorChen, JKen_US
dc.contributor.authorChien, SCen_US
dc.date.accessioned2014-12-08T15:26:10Z-
dc.date.available2014-12-08T15:26:10Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7694-3en_US
dc.identifier.issn1529-2517en_US
dc.identifier.urihttp://hdl.handle.net/11536/18553-
dc.identifier.urihttp://dx.doi.org/10.1109/RFIC.2003.1213965en_US
dc.description.abstractAs scaling down the RF MOSFET from 0.18 to 0.13 mum technology nodes, the f(T) increases but the NFmin becomes worse by increasing similar to0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 mum MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 mum is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.en_US
dc.language.isoen_USen_US
dc.titleThe minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RFIC.2003.1213965en_US
dc.identifier.journal2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERSen_US
dc.citation.spage373en_US
dc.citation.epage376en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184031700085-
Appears in Collections:Conferences Paper


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