標題: | Complementary substrate-triggered SCR devices for on-chip ESD protection circuits |
作者: | Ker, MD Hsu, KC 電機學院 College of Electrical and Computer Engineering |
公開日期: | 2002 |
摘要: | The turn-on mechanism of SCR device is essentially a current triggering event. While a current is applied to the base or substrate of a SCR device, it can be quickly triggered on into its latching state. In this paper, the complementary substrate-triggered SCR devices which are combined with the substrate-triggered technique and SCR devices, are first reported in the literature for using in the on-chip ESD. protection circuits. A complementary style on the substrate-triggered SCR devices is designed to discharge both of the positive and negative ESD stresses on the pad. The total holding voltage of the substrate-triggered SCR device can be increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices for the I/O pad and power pad have been successfully verified in a 0.25-mum STI CMOS process with the HBM (MM) ESD level of >8kV (650V) in a small layout area. |
URI: | http://hdl.handle.net/11536/18807 |
ISBN: | 0-7803-7494-0 |
ISSN: | 1063-0988 |
期刊: | 15TH ANNUAL IEEE INTERNATIONAL ASIC/SOC CONFERENCE, PROCEEDINGS |
起始頁: | 229 |
結束頁: | 233 |
顯示於類別: | 會議論文 |