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dc.contributor.authorLEE, GHen_US
dc.contributor.authorSU, JSen_US
dc.contributor.authorCHUNG, SSen_US
dc.date.accessioned2014-12-08T15:03:20Z-
dc.date.available2014-12-08T15:03:20Z-
dc.date.issued1995-06-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/1880-
dc.description.abstractPrevious studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of drain side of MOS devices are rather difficult. A new technique which allows the simultaneous characterization of the spatial distributions of both N-it and Q(ox) will be presented. Submicron LDD n-MOS devices were tested and charge pumping (CP) measurements were performed. The spatial distributions of both N-it and Q(ox) have been justified by 2-D device simulation results. Results show that simulated drain current characteristics compare well with experimental data. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation in LDD n-MOS devices.en_US
dc.language.isoen_USen_US
dc.titleA NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETSen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume28en_US
dc.citation.issue1-4en_US
dc.citation.spage365en_US
dc.citation.epage368en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RD49200076-
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