A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS

Abstract

Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of drain side of MOS devices are rather difficult. A new technique which allows the simultaneous characterization of the spatial distributions of both N-it and Q(ox) will be presented. Submicron LDD n-MOS devices were tested and charge pumping (CP) measurements were performed. The spatial distributions of both N-it and Q(ox) have been justified by 2-D device simulation results. Results show that simulated drain current characteristics compare well with experimental data. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation in LDD n-MOS devices.