標題: Novel ESD implantation for sub-quarter-micron CMOS technology with enhanced machine-model ESD robustness
作者: Ker, MD
Hsu, HC
Peng, JH
電機學院
College of Electrical and Computer Engineering
公開日期: 2002
摘要: A novel ESD implantation method is proposed to significantly improve machine-model (MM) electrostatic discharge (ESD) robustness of CMOS integrated circuits in sub-quarter-micron CMOS processes. By using this method, the ESD current is discharged far away from the surface channel of NMOS, therefore the NMOS can sustain a much higher ESD level, especially under the machine-model ESD stress. The MM ESD robustness of the gate-grounded NMOS (ggNMOS) with a device dimension of W/L = 300mum/0.5mum has been successfully improved from the original 450V to become 675V in a 0.25-mum CMOS process.
URI: http://hdl.handle.net/11536/18879
ISBN: 0-7803-7416-9
期刊: PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始頁: 70
結束頁: 74
Appears in Collections:Conferences Paper