ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS

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DC Field	Value	Language
dc.contributor.author	YANG, CK	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:03:20Z	-
dc.date.available	2014-12-08T15:03:20Z	-
dc.date.issued	1995-06-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.790717	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1887	-
dc.description.abstract	This letter reports that passivation effects of the H-2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to the conventional devices with only the SiO2 gate dielectric, the TFT's with Si3N4 have much more improvement on their subthreshold swing and field-effect mobility after H-2-plasma treatment.	en_US
dc.language.iso	en_US	en_US
dc.title	ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.790717	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	6	en_US
dc.citation.spage	228	en_US
dc.citation.epage	229	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RA18200005	-
dc.citation.woscount	18	-
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