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dc.contributor.authorPeng, JJen_US
dc.contributor.authorKer, MDen_US
dc.contributor.authorJiang, HCen_US
dc.date.accessioned2014-12-08T15:26:38Z-
dc.date.available2014-12-08T15:26:38Z-
dc.date.issued2002en_US
dc.identifier.isbn0-7803-7448-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18923-
dc.description.abstractA latchup current self-stop methodology and circuit design, which are used to prevent damage in the bulk CMOS integrated circuits due to latchup, are proposed in this paper. In a bulk CMOS chip, the core circuit blocks are always latchup sensitive due to a low holding voltage of the parasitic SCR path. The proposed latchup prevention methodology and circuit design can detect and stop the occurrence of latchup without any process modification or extra fabrication cost. It is suitable for whole-chip latchup prevention of bulk CMOS integrated circuits. This proposed latchup current self-stop methodology and circuit have been verified in a 0.5-mum 1P3M bulk CMOS process.en_US
dc.language.isoen_USen_US
dc.titleLatchup current self-stop circuit for whole-chip latchup prevention in bulk CMOS integrated circuitsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2002 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL V, PROCEEDINGSen_US
dc.citation.spage537en_US
dc.citation.epage540en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000186328700135-
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