標題: Electrical reliability of low dielectric constant diffusion barrier (a-SiC : H) for copper interconnect
作者: Fang, KL
Tsui, BY
Yang, CC
Lee, SD
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2001
摘要: The electrical stability and reliability of the Trimethylsilane (3MS) based a-SiC:H (SIC) film was investigated for the first time. Capacitance-Voltage (C-V) characteristic instability was observed due to polarization at high electrical filed and electron injection at Low electrical field. By adding nitrogen content in the film, the dielectric constant and leakage current are reduced but the time dependent dielectric breakdown (TDDB) lifetime becomes worse at high nitrogen content. It is suggested that the SiC deposition can be optimized at moderate nitrogen content to compromise all film properties.
URI: http://hdl.handle.net/11536/19023
ISBN: 0-7803-6678-6
期刊: PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
起始頁: 250
結束頁: 252
顯示於類別:會議論文