Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications

Abstract

The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs = Vbs < 0.85V) and over-drive (Vgs = Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation, a high Ft of 220GHz with good linearity and stability is achieved under over-drive mode of operation.