標題: Investigations of bulk dynamic threshold-voltage MOSFET with 65GHz "normal-mode" Ft and 220GHz "over-drive mode" Ft for RF applications
作者: Chang, CY
Su, JG
Hsu, HM
Wong, SC
Huang, TY
Sun, YC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2001
摘要: The RF properties of bulk dynamic threshold-voltage MOSFET (B-DTMOS) with a deep n-well isolation was investigated both under the normal DTMOS mode and two newly-proposed DTMOS operation modes: moderate (0.6V < Vgs = Vbs < 0.85V) and over-drive (Vgs = Vbs > 0.85V) modes. While Ft can be improved to 65GHz at 12.5mA with 1.5V Vds bias under normal-mode DTMOS operation, a high Ft of 220GHz with good linearity and stability is achieved under over-drive mode of operation.
URI: http://hdl.handle.net/11536/19056
ISBN: 4-89114-012-7
期刊: 2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁: 89
結束頁: 90
Appears in Collections:Conferences Paper