標題: | CDM ESD Protection in CMOS Integrated Circuits |
作者: | Ker, Ming-Dou Hsiao, Yuan-Wen 電機學院 College of Electrical and Computer Engineering |
公開日期: | 2008 |
摘要: | The impacts of charged-device-model (CDM) electrostatic discharge (ESD) events on integrated circuit (IC,) products are presented in this paper. The mechanism of chip-level CDM ESD event is introduced with some case studies on CDM ESD damages. Besides the chip-level CDM ESD event, the board-level CDM ESD event, which had been reported to cause damages in many customer-returned ICs, is also investigated in this work The chip-level and board-level CDM ESD levels of several test devices and test circuits fabricated in CMOS processes are characterized and compared. The experimental results have shown that the board-level CDM ESD level of the test circuit is much lower than the chip-level CDM ESD level, which indicates that the board-level CDM ESD test is more critical than the chip-level CDM ESD test in the field applications. In addition, failure analysis reveals that the failure on the test circuit under board-level CDM ESD test is much severer than that under chip-level CDM ESD test. |
URI: | http://hdl.handle.net/11536/1908 |
ISBN: | 978-987-655-007-9 |
期刊: | 2008 ARGENTINE SCHOOL OF MICRO-NANOELECTRONICS, TECHNOLOGY AND APPLICATIONS |
起始頁: | 61 |
結束頁: | 66 |
Appears in Collections: | Conferences Paper |