標題: 2.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system application
作者: Chen, SH
Chang, EY
Lin, YC
Lee, CS
友訊交大聯合研發中心
D Link NCTU Joint Res Ctr
關鍵字: enhancement-mode;PHEMT;low voltage;PHS
公開日期: 2001
摘要: Enhacement-mode pseudomorphic high electron mobility transistors (E-PHEMTs) were developed for low voltage wireless communication applications. Under drain bias of 3.6 V, the device delivered a high output power density of 265.25 mW/mm (29.5dBm) with a power-added-efficiency (PAE) of 50.54 %. Under 1.9GHz pi/4-shifted quadrature phase shift keying(QPSK) modulation signal, the 3.36 mm devices meet personal handy-phone system (PHS) specification at an output power level of 22.42 dB with PAE of 35.12% under 2.4 V drain bias. The E-PHEMTs developed are adequate for low-voltage-operated PHS application.
URI: http://hdl.handle.net/11536/19097
ISBN: 0-7803-7065-1
期刊: IMOC 2001: PROCEEDINGS OF THE 2001 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE: THE CHALLENGE OF THE NEW MILLENIUM: TECHNOLOGICAL DEVELOPMENT WITH ENVIRONMENTAL CONSCIOUSNESS
起始頁: 127
結束頁: 129
顯示於類別:會議論文