A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS

Abstract

By reconsidering the effect of the penetration depth of the interface states, a new analytical expression of the interface index has been achieved to successfully explain the role of the semiconductor ionicity in the behavior of metal-Schottky contacts on semiconductors. The derived interface indices not only fit quite well with the previous experimental data but also exhibit a sharp transition from the Bardeen limit to the Schottky limit for semiconductor ionicity around 0.8, which agrees well with the experiment reports.