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dc.contributor.authorTarntair, FGen_US
dc.contributor.authorWang, CCen_US
dc.contributor.authorHong, WKen_US
dc.contributor.authorHuang, HKen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:27:14Z-
dc.date.available2014-12-08T15:27:14Z-
dc.date.issued1998en_US
dc.identifier.isbn1-55899-415-7en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/19460-
dc.description.abstractA triode structure of chimney-shaped field emitter arrays is proposed in this article. This triode structure includes the chimney-shaped emitter, thermal oxidation dioxide, and the plateau-shaped singlecrystalline silicon gate electrode. For the application of the matrix-addressable and large area flat panel display, the uniform structure of the emitters and the yield become critical manufacturing issues when attempting to control nano-meter size features. The uniformity and yield of the chimney-shaped emitters are very well controlled. The nano-sized gate-to-emitter separations can be created by the changing thickness of the insulator. The uniformity of the insulator and emitter material can be controlled within 3% which can be obtained by most large area thin film deposition tools, not by photolithography.en_US
dc.language.isoen_USen_US
dc.titleChimney-shaped and plateau-shaped gate electrode field emission arraysen_US
dc.typeProceedings Paperen_US
dc.identifier.journalMATERIALS ISSUES IN VACUUM MICROELECTRONICSen_US
dc.citation.volume509en_US
dc.citation.spage15en_US
dc.citation.epage20en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000077248500028-
Appears in Collections:Conferences Paper