Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications

doi:10.1117/12.306153

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DC 欄位	值	語言
dc.contributor.author	Pan, CL	en_US
dc.contributor.author	Lin, GR	en_US
dc.date.accessioned	2014-12-08T15:27:15Z	-
dc.date.available	2014-12-08T15:27:15Z	-
dc.date.issued	1998	en_US
dc.identifier.isbn	0-8194-2716-0	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19484	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.306153	en_US
dc.description.abstract	Arsenic-ion-implanted GaAs (or GaAs:As+), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally-annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained.	en_US
dc.language.iso	en_US	en_US
dc.subject	arsenic-ion-implanted GaAs	en_US
dc.subject	GaAs : As+	en_US
dc.subject	ultrafast	en_US
dc.subject	photoconductive switch	en_US
dc.title	Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.306153	en_US
dc.identifier.journal	ULTRAFAST PHENOMENA IN SEMICONDUCTORS II	en_US
dc.citation.volume	3277	en_US
dc.citation.spage	170	en_US
dc.citation.epage	178	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000074381700020	-
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