標題: A model for photoresist-induced charging damage in ultra-thin gate oxides
作者: Lin, HC
Chien, CH
Wang, MF
Huang, TY
Chang, CY
交大名義發表
奈米中心
National Chiao Tung University
Nano Facility Center
公開日期: 1997
摘要: The role of photoresist (PR) in affecting the gate oxide damage during plasma processing boas reexamined in this work. if was observed that, during the O-2 plasma ashing, more severe antenna effect may occur in devices with PR covering. A model is proposed to explain this phenomenon. This model considers the ability of plasma current injection through the substrate contacts, which are hindered by PR covering, to adjust the potential difference between gate electrode and substrate. We Sound that the presence of PR, antenna ratio, and gate-oxide thickness are all important parameters for charging damage effect.
URI: http://hdl.handle.net/11536/19667
ISBN: 0-9651-5771-7
期刊: 1997 2ND INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE
起始頁: 247
結束頁: 250
Appears in Collections:Conferences Paper