標題: Characterization of various stress-induced oxide traps in MOSFET's by using a novel transient current technique
作者: Wang, TH
Chiang, LP
Zous, NK
Chang, TE
Huang, C
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1997
摘要: A new oxide trap characterization technique by employing a two-phase subthreshold current measurement has been developed. By varing the gate bias and the drain bias in measurement, the field and temperature dependences of oxide charge detrapping and the spatial distributions of various stress induced oxide traps are characterized.
URI: http://hdl.handle.net/11536/19713
ISBN: 0-7803-4101-5
期刊: INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST
起始頁: 89
結束頁: 92
Appears in Collections:Conferences Paper