Ultra-thin oxide with atomically smooth interfaces

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	Kao, RH	en_US
dc.contributor.author	Lin, BC	en_US
dc.contributor.author	Chang, T	en_US
dc.contributor.author	Tsai, C	en_US
dc.contributor.author	Huang, JCM	en_US
dc.date.accessioned	2014-12-08T15:27:49Z	-
dc.date.available	2014-12-08T15:27:49Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-4131-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20055	-
dc.description.abstract	Native oxide is an important issue for ultra-thin oxide, which is strongly related to the gate oxide integrity such as Q(BD), interface scattering, etc. We have designed a leak-tight low-pressure oxidation system to desorb the native oxide in-situ. Atomically flat interfaces between oxide and Si are obtained for oxide thicknesses of 11 and 38 Angstrom. Because of the smooth interface and good thickness uniformity of oxide, both high-field electron mobility and oxide breakdown behavior are much improved.	en_US
dc.language.iso	en_US	en_US
dc.title	Ultra-thin oxide with atomically smooth interfaces	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	1997 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	177	en_US
dc.citation.epage	181	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995BJ34C00038	-
顯示於類別：	會議論文