標題: Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices
作者: Tsai, Yu-Ting
Chang, Ting-Chang
Huang, Wei-Li
Huang, Chih-Wen
Syu, Yong-En
Chen, Shih-Cheng
Sze, Simon M.
Tsai, Ming-Jinn
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 29-Aug-2011
摘要: Dual bipolar resistive switching characteristics were observed in the Pt/DyMn(2)O(5)/TiN memory devices. The typical switching effect could be attributed to the formation and rupture of the conducting filament in DyMn(2)O(5) films. The parasitic switching behavior can be observed in the specific operation condition. Dual bipolar resistance switching behaviors of filament-type and interface-type can coexist in the devices by appropriate voltage operation. The operating current can be significantly decreased (100 times) by parasitic switching operation for portable electronic product application. In addition, the relationship between filament-type and interface-type switching behaviors were studied in this paper. (C) 2011 American Institute of Physics. [doi:10.1063/1.3629788]
URI: http://dx.doi.org/10.1063/1.3629788
http://hdl.handle.net/11536/20090
ISSN: 0003-6951
DOI: 10.1063/1.3629788
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 9
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