| 標題: | IMPROVED ELECTRICAL CHARACTERISTICS OF THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS |
| 作者: | YANG, CK LEI, TF LEE, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1994 |
| URI: | http://hdl.handle.net/11536/20110 |
| ISBN: | 0-7803-2111-1 |
| 期刊: | INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST |
| 起始頁: | 505 |
| 結束頁: | 508 |
| Appears in Collections: | Conferences Paper |
- The electrical characteristics of high-kappa Pr2O3 thin-film transistors with nitrogen-implanted polysilicon films / Deng, C. -K.;Chang, H. -R.;Chiou, B. -S.
- CHARACTERISTICS OF TOP-GATE THIN-FILM TRANSISTORS FABRICATED ON NITROGEN-IMPLANTED POLYSILICON FILMS / YANG, CK;LEI, TF;LEE, CL
- Nitrogen effects on the integrity of silicon dioxide grown on polycrystalline silicon / Lai, Chao Sung;Kao, Chyuan Haur;Lee, Chung Len;Lei, Tan Fu
- 複晶矽薄膜電晶體製程及特性之研究 / 汪芳興;Wang, Fang-Shing;鄭晃忠;Cheng Huang-Chung
- Characteristics of Pr2O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon films / Chang, Chia-Wen;Deng, Chih-Kang;Huang, Jiun-Jia;Chang, Hong-Ren;Lei, Tan-Fu
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