標題: Bipolar conductivity in amorphous HfO(2)
作者: Islamov, D. R.
Gritsenko, V. A.
Cheng, C. H.
Chin, A.
交大名義發表
National Chiao Tung University
公開日期: 15-Aug-2011
摘要: This study calculates the contribution of electrons and holes to HfO(2) conductivity in Si/HfO(2)/Ni structures using experiments on injection of minority carriers from n- and p-type silicon. Results show that electrons and holes contribute to the conductivity of HfO(2), allowing HfO(2) to exhibit two-band conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3626599]
URI: http://dx.doi.org/10.1063/1.3626599
http://hdl.handle.net/11536/20212
ISSN: 0003-6951
DOI: 10.1063/1.3626599
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 7
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