CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O

標題:	CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
作者:	CHAO, TS LEI, TF 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	1-Mar-1995
摘要:	Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
URI:	http://dx.doi.org/10.1149/1.2048576 http://hdl.handle.net/11536/2027
ISSN:	0013-4651
DOI:	10.1149/1.2048576
期刊:	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume:	142
Issue:	3
起始頁:	L34
結束頁:	L35
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.