標題: ESD Protection Structure with Inductor-Triggered SCR for RF Applications in 65-nm CMOS Process
作者: Lin, Chun-Yu
Chu, Li-Wei
Ker, Ming-Dou
Song, Ming-Hsiang
Jou, Chewn-Pu
Lu, Tse-Hua
Tseng, Jen-Chou
Tsai, Ming-Hsien
Hsu, Tsun-Lai
Hung, Ping-Fang
Chang, Tzu-Heng
交大名義發表
National Chiao Tung University
關鍵字: Electrostatic discharge (ESD);radio-frequency (RF);silicon-controlled rectifier (SCR)
公開日期: 2012
摘要: To protect radio-frequency (RF) integrated circuits from electrostatic discharge (ESD) damages, silicon-controlled rectifier (SCR) devices have been used as main on-chip ESD protection devices due to their high ESD robustness and low parasitic capacitance in nanoscale CMOS technologies. In this work, the SCR device assisted with an inductor to resonate at the selected frequency band for RF performance fine tune was proposed. Besides, the inductor can be also designed to improve the turn-on efficiency of the SCR device for ESD protection. Verified in a 65-nm CMOS process, the ESD protection design with the inductor-triggered SCR for 60-GHz RF applications can achieve good RF performances and high ESD robustness.
URI: http://hdl.handle.net/11536/20362
ISBN: 978-1-4577-1679-9
期刊: 2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
Appears in Collections:Conferences Paper