| 標題: | BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING |
| 作者: | YEH, CF CHEN, CL LUR, W YEN, PW 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 20-Feb-1995 |
| URI: | http://dx.doi.org/10.1063/1.113603 http://hdl.handle.net/11536/2045 |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.113603 |
| 期刊: | APPLIED PHYSICS LETTERS |
| Volume: | 66 |
| Issue: | 8 |
| 起始頁: | 938 |
| 結束頁: | 940 |
| Appears in Collections: | Articles |
- CONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMS / YEH, CF;CHEN, CL
- Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment / Mei, YJ;Chang, TC;Chang, SJ;Pan, FM;Chen, MSK
- Novel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition method / Yeh, CF;Lin, SS
- THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY / YEH, CF;CHEN, CL;LIN, GH
- Selective SiO2-xFx growth with liquid-phase deposition for MEMS technology / Yeh, CF;Lee, YC;Su, JL
Loading...