標題: | THE PHYSICOCHEMICAL PROPERTIES AND GROWTH-MECHANISM OF OXIDE (SIO2-XFX) BY LIQUID-PHASE DEPOSITION WITH H2O ADDITION ONLY |
作者: | YEH, CF CHEN, CL LIN, GH 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十一月-1994 |
摘要: | Silicon oxide formation was studied by a novel liquid phase deposition (LPD) method with H2O addition only at 35-degrees-C. The deposition rate could be controlled by varying the quantity of H2O added. The LPD-oxide was lightly oxygen-deficient. FTIR spectra and AES depth profiles indicate that a small amount of fluorine was incorporated into the oxide. The composition of LPD-oxide can be represented as SiO2-xFx. The physicochemical properties of LPD oxide were investigated, as was the behavior of fluorine in the oxide and the chemical reaction. A model for the LPD mechanism is proposed that satisfactorily explains all of the experimental phenomena observed. |
URI: | http://hdl.handle.net/11536/2262 |
ISSN: | 0013-4651 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 141 |
Issue: | 11 |
起始頁: | 3177 |
結束頁: | 3181 |
顯示於類別: | 期刊論文 |