完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | YEH, CF | en_US |
dc.contributor.author | CHEN, CL | en_US |
dc.contributor.author | LUR, W | en_US |
dc.contributor.author | YEN, PW | en_US |
dc.date.accessioned | 2014-12-08T15:03:31Z | - |
dc.date.available | 2014-12-08T15:03:31Z | - |
dc.date.issued | 1995-02-20 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.113603 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2045 | - |
dc.language.iso | en_US | en_US |
dc.title | BOND-STRUCTURE CHANGES OF LIQUID-PHASE DEPOSITED OXIDE (SIO2-XFX) ON N2 ANNEALING | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.113603 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 66 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.spage | 938 | en_US |
dc.citation.epage | 940 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1995QH86100012 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |