Design of ESD Protection Cell for Dual-Band RF Applications in a 65-nm CMOS Process

Abstract

An ESD protection cell consisted of a diode, a silicon-controlled rectifier (SCR), a PMOS, and inductors was proposed for dual-band radio-frequency (RF) ESD protection. The proposed ESD protection cell was suitable for RF circuit designers for them to easily apply ESD protection in the dual-band RF circuits.