標題: | A New Procedure to Extract Ultra-Low Specific Contact Resistivity |
作者: | Tseng, Hsuan-Tzu Tsui, Bing-Yue 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2012 |
摘要: | In this work, a new procedure to extract ultra-low specific contact resistivity down to 10(-9) Omega-cm(2) is proposed. Design guidelines of the test structure are analyzed with 3-D simulation. Compared to the typical Cross-bridge-Kelvin resistor structure, the proposed structure has much better accuracy at low resistivity regime, looser design rules, simpler fabrication process. |
URI: | http://hdl.handle.net/11536/20753 |
ISBN: | 978-1-4673-1137-3 |
期刊: | 2012 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC) |
Appears in Collections: | Conferences Paper |