Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well

標題:	Lateral Two-Dimensional p-i-n Diode in a Completely Undoped GaAs/AlGaAs Quantum Well
作者:	Van-Truong Dai Lin, Sheng-Di Lin, Shih-Wei Wu, Jau-Yang Li, Liang-Chen Lee, Chien-Ping 電子工程學系及電子研究所奈米科技中心 Department of Electronics Engineering and Institute of Electronics Center for Nanoscience and Technology
公開日期:	1-Jan-2013
摘要:	A lateral two-dimensional p-i-n junction in an entirely undoped GaAs/AlGaAs quantum well has been fabricated. The optical and electrical characteristics of the junction are reported. The threshold voltage of the junction and the electroluminescence spectrum of the quantum well confirm the formation of the lateral two-dimensional junction. (C) 2013 The Japan Society of Applied Physics
URI:	http://dx.doi.org/10.7567/JJAP.52.014001 http://hdl.handle.net/11536/20795
ISSN:	0021-4922
DOI:	10.7567/JJAP.52.014001
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS
Volume:	52
Issue:	1
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Appears in Collections:	Articles

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