Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer

doi:10.1149/1.3375627

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, C. C.	en_US
dc.contributor.author	Wu, Y. C.	en_US
dc.contributor.author	Tung, T. F.	en_US
dc.contributor.author	Wu, H. Y.	en_US
dc.date.accessioned	2014-12-08T15:29:05Z	-
dc.date.available	2014-12-08T15:29:05Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-141-0	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20986	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3375627	en_US
dc.description.abstract	Fluorinated-silicate-glass (FSG) was combined with Ni-metal-induced lateral crystallization (NILC) polycrystalline silicon thin-film transistors (poly-Si TFTs). It was found that the electrical performances were improved because the trap-state density was decreased by fluorine-ion passivation. Moreover, FSG-NILC-TFTs possess high immunity against the hot-carrier stress and, thereby, exhibit better reliability.	en_US
dc.language.iso	en_US	en_US
dc.title	Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3375627	en_US
dc.identifier.journal	ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 6: NEW MATERIALS, PROCESSES, AND EQUIPMENT	en_US
dc.citation.volume	28	en_US
dc.citation.issue	1	en_US
dc.citation.spage	401	en_US
dc.citation.epage	404	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000313489900045	-
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