Interface Morphology Investigation of Bonded p-GaAs/p-Si Wafers

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DC Field	Value	Language
dc.contributor.author	Hsieh, Cheng-Yu	en_US
dc.contributor.author	YewChung	en_US
dc.contributor.author	Wu, Sermon	en_US
dc.date.accessioned	2014-12-08T15:29:06Z	-
dc.date.available	2014-12-08T15:29:06Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-173-1	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20995	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3483526	en_US
dc.description.abstract	The integration of GaAs and Si can combine the superior electrical and optical properties of GaAs with the mechanical and economical advantages of Si. It presents great potential for OEICs applications. In this study, direct wafer bonding was applied to combine bulk p-Si and p-GaAs. Interface morphologies of bonded p-GaAs/p-Si wafers were investigated by TEM.	en_US
dc.language.iso	en_US	en_US
dc.title	Interface Morphology Investigation of Bonded p-GaAs/p-Si Wafers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3483526	en_US
dc.identifier.journal	SEMICONDUCTOR WAFER BONDING 11: SCIENCE, TECHNOLOGY, AND APPLICATIONS - IN HONOR OF ULRICH GOSELE	en_US
dc.citation.volume	33	en_US
dc.citation.issue	4	en_US
dc.citation.spage	371	en_US
dc.citation.epage	374	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000313616900038	-
Appears in Collections:	Conferences Paper

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