Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution

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DC 欄位	值	語言
dc.contributor.author	Chen, Yu-Chung	en_US
dc.contributor.author	Chao, Yu-Cheng	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:29:42Z	-
dc.date.available	2014-12-08T15:29:42Z	-
dc.date.issued	2010	en_US
dc.identifier.isbn	978-1-60768-174-8	en_US
dc.identifier.issn	1938-5862	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21334	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.3481232	en_US
dc.description.abstract	In this study, we fabricated a NILC surface on a SiO2-coated silicon wafer, and then used HCl solution and H2SO4 + H2O2 solution to do surface treatment. The treatment could reduce Ni or NiSi2 that was trapped at the surface of silicon and therefore the electrical characteristics of these devices were improved.	en_US
dc.language.iso	en_US	en_US
dc.title	Improved Electrical Performance of NILC Poly-Si TFTs Manufactured Using H2SO4 and HCl Solution	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1149/1.3481232	en_US
dc.identifier.journal	THIN FILM TRANSISTORS 10 (TFT 10)	en_US
dc.citation.volume	33	en_US
dc.citation.issue	5	en_US
dc.citation.spage	165	en_US
dc.citation.epage	168	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000315444100019	-
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