標題: Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
作者: Tsai, Jyun-Yu
Chang, Ting-Chang
Lo, Wen-Hung
Chen, Ching-En
Ho, Szu-Han
Chen, Hua-Mao
Tai, Ya-Hsiang
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 18-Feb-2013
摘要: This work finds a significant difference in degradation under hot carrier stress (HCS) due to additional hole injection in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. A comparison performed on degradation of input/output (I/O) and standard performance (SP) devices showed that performance degradation of the I/O device is worse than the SP device under HCS. For the SP device, both channel-electrons and hot holes can inject into gate dielectric, in which hole acts to diminish the stress field. However, I/O device shows only electron injection. The proposed model is confirmed by gate induced drain leakage current and simulation tool. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791676]
URI: http://dx.doi.org/10.1063/1.4791676
http://hdl.handle.net/11536/21432
ISSN: 0003-6951
DOI: 10.1063/1.4791676
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 7
結束頁: 
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