標題: Investigation and Comparison of Work Function Variation for FinFET and UTB SOI Devices Using a Voronoi Approach
作者: Chou, Shao-Heng
Fan, Ming-Long
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FinFET;ultrathin body silicon-on-insulator MOSFET;variability;Voronoi;work-function variation (WFV)
公開日期: 1-Apr-2013
摘要: Using a novel Voronoi method that can provide a more realistic representation of metal-gate granularity, we investigate and compare the impact of work-function variation (WFV) on FinFET and ultrathin body (UTB) silicon-on-insulator (SOI) devices. Our study indicates that, for a given electrostatic integrity and total effective gate area, the FinFET device exhibits better immunity to WFV than its UTB SOI counterpart. We further show that, unlike other sources of random variation, the WFV cannot be suppressed by equivalent oxide thickness scaling.
URI: http://dx.doi.org/10.1109/TED.2013.2248087
http://hdl.handle.net/11536/21720
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2248087
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 4
起始頁: 1485
結束頁: 1489
Appears in Collections:Articles


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